Item Details

abstract

Organic semiconductors and hybrid organic/inorganic perovskite semiconductors can address new applications, which are off-limits for conventional silicon-based electronics. We fabricate organic field-effect transistors (OFETs) and through the use of several device architectures, in combination with surface treatments, we were able to achieve mobilities as high as 6.8 cm2/Vs. We find that the microstrain induced in the organic semiconductor layer by the mismatch in the thermal expansion between the consecutive device layers generates trapping states and localize charge carriers, leading to a surprising universal scaling between the activation energy of the devices and the interfacial thermal expansion mismatch coefficient.

subject

charge transport

field-effect transistors

hybrid perovskite

organic semiconductors

contributor

Mei, Yaochuan (author)

Jurchescu, Oana D (committee chair)

Carroll, David L (committee member)

Guthold, Martin (committee member)

Macosko, Jed (committee member)

date

2016-05-21T08:35:29Z (accessioned)

2018-05-20T08:30:13Z (available)

2016 (issued)

degree

Physics (discipline)

embargo

2018-05-20 (terms)

identifier

http://hdl.handle.net/10339/59262 (uri)

language

en (iso)

publisher

Wake Forest University

title

CHARGE TRANSPORT IN ORGANIC AND HYBRID PEROVSKITE FIELD EFFECT TRANSISTORS

type

Dissertation