Item Details

title

Reduction of Electronic Traps in Organic Semiconductors by Novel Processing Methods

author

Diemer, Peter James

abstract

In a field dominated by inorganic semiconductors, carbon-based materials are emerging as possible replacements for devices where a moderate performance is acceptable, with many desirable traits that make them better suited in certain applications. Specifically, many organic semiconductors can be processed at room temperature and ambient pressure instead of the high temperature and vacuum as required by polycrystalline silicon. This property has two main advantages: 1) Cuts production cost since the expense of the high-temperature/vacuum equipment is no longer necessary and 2) Broader range of substrates on which the semiconductors can be deposited, such as paper, fabric, and plastic, that would otherwise be destroyed by the heat of inorganic deposition. Current rigid and fragile electronic devices could be supplanted by more robust and flexible organic-based substitutes while reducing fabrication costs.

subject

bandgap states

field-effect transistors

Organic electronics

organic semiconductors

thin-film

contributor

Jurchescu, Oana D (committee chair)

Carlson, Eric D (committee member)

Holzwarth, Natalie A.W. (committee member)

Matthews, George E (committee member)

date

2016-05-21T08:35:35Z (accessioned)

2018-05-20T08:30:12Z (available)

2016 (issued)

degree

Physics (discipline)

embargo

2018-05-20 (terms)

identifier

http://hdl.handle.net/10339/59273 (uri)

language

en (iso)

publisher

Wake Forest University

type

Dissertation